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MMDT4401
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * *
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability
E2 B2 C1 C2
A
B1 E1
SOT-363 Dim A
BC
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
B C D F
M
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K2X Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
E2 C2
H K
0.65 Nominal
H J K L M a
J
D
B1 E1
F
L
All Dimensions in mm
B2 C1
Maximum Ratings @ TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Notes:
Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG
Value 60 40 6.0 600 200 625 -55 to +150
Unit V V V mA mW C/W C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead.
DS30111 Rev. 10 - 2
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MMDT4401
a Diodes Incorporated
Electrical Characteristics @ TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) 20 40 80 100 40 3/4 0.75 3/4 3/4 3/4 1.0 0.1 40 1.0 250 3/4 3/4 3/4 300 3/4 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 3/4 IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 3/4 3/4 3/4 3/4 3/4 100 100 V V V nA nA IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V Symbol Min Max Unit Test Condition
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA, f = 100MHz
td tr ts tf (Note 5)
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Ordering Information
Device MMDT4401-7-F
Notes:
Packaging SOT-363
Shipping 3000/Tape & Reel
4. Short duration pulse test used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2X YM K2X YM
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5
K2X = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30111 Rev. 10 - 2
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MMDT4401
300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs Ambient Temperature
hFE, DC CURRENT GAIN
1000
TA = 125C
100 TA = -25C TA = +25C
10
VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current
30
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA
20
Cibo
CAPACITANCE (pF)
10
5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance
IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
0.5
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VCE = 5V TA = -50C TA = 25C
TA = 150C
0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current
DS30111 Rev. 10 - 2
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MMDT4401
1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V
100
10
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
DS30111 Rev. 10 - 2
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MMDT4401

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